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参数资料
| 型号： | 2SK3077 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | 2-2K1D, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 150K |
| 代理商： | 2SK3077 |
2SK3077
2007-2-19
1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3077
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
(Note)The TOSHIBA products listed in this document are intended for
high frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
Output Power
: PO = 15.0 dBmW (Min.)
Gain
: GP = 15.0 dB (Min.)
Drain Efficiency
: ηD = 20% (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
10
V
Gate-Source Voltage
VGSS
5
V
Drain Current
ID
0.1
A
Power Dissipation
PD*
250
mW
Channel Temperature
Tch
150
°C
Storage Temperature Range
Tstg
45~150
°C
*:
Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
MARKING
Unit: mm
JEDEC
—
JEITA
—
TOSHIBA
22K1D
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PDF描述 |
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| 2SK3096 | 7 A, 400 V, 0.87 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3107 | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3109-S | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3109-ZJ | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3109 | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3077_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3077A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF/UHF Band Amplifier Applications |
| 2SK3078 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3078A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 2SK3078A(TE12L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 10V 0.5A 4-Pin (3+Tab) PW-Mini T/R |
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