参数资料
型号: 2SK3077
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封装: 2-2K1D, 4 PIN
文件页数: 2/4页
文件大小: 150K
代理商: 2SK3077
2SK3077
2007-2-19
2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Output Power
PO
15.0
dBmW
Drain Efficiency
ηD
20.0
%
Power Gain
GP
VDS = 4.8V
Iidle = 43 mA (VGS = adjust)
f = 915 MHz, Pi = 0 dBmW
15.0
dB
Threshold Voltage
Vth
VDS = 4.8 V, ID = 0.5 mA
0.25
1.25
V
Drain Cut-off Current
IDSS
VDS = 10 V, VGS = 0 V
10
A
Gate-Source Leakage Current
IGSS
VGS = 5 V, VDS = 0 V
5
A
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.
CAUTION
This transistor is the electrostatic sensitive device.
Please handle with caution.
RF OUTPUT POWER TEST FIXTURE
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