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参数资料
| 型号： | 2SK3078 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | 2-5K1D, SC-62, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 189K |
| 代理商： | 2SK3078 |
2SK3078
2007-11-01
2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Output Power
PO
27.0
―
dBmW
Drain Efficiency
ηD
―
46.0
―
%
Power Gain
GP
VDS = 4.8 V
Iidle = 108 mA (VGS = adjust)
f = 915 MHz, Pi = 14.5 dBmW
12.5
―
dB
Threshold Voltage
Vth
VDS = 4.8 V, ID = 0.5 mA
0.20
―
1.20
V
Drain Cut-off Current
IDSS
VDS = 10 V, VGS = 0 V
―
10
μA
Gate-Source Leakage Current
IGSS
VGS = 5 V, VDS = 0 V
―
5
μA
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.
RF OUTPUT POWER TEST FIXTURE
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PDF描述 |
|---|---|
| 2SK3079A | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK3079 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK3089(2-10S2B) | 40 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3089(2-10S2B) | 40 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3090(2-10S1B) | 45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3078A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 2SK3078A(TE12L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 10V 0.5A 4-Pin (3+Tab) PW-Mini T/R |
| 2SK3078A_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications |
| 2SK3079A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
| 2SK3079A_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
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