参数资料
型号: 2SK3089(2-10S2B)
元件分类: JFETs
英文描述: 40 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-10S2B, 3 PIN
文件页数: 1/3页
文件大小: 177K
代理商: 2SK3089(2-10S2B)
2SK3089
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSVI)
2SK3089
Chopper Regulator DCDC Converter, and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 25 m (typ.)
High forward transfer admittance
: |Yfs| = 20 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 30 V)
Enhancement mode
: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
30
V
Draingate voltage (RGS = 20 k)
VDGR
30
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
40
Drain current
Pulse (Note 1)
IDP
80
A
Drain power dissipation (Tc = 25°C)
PD
50
W
Single pulse avalanche energy
(Note 2)
EAS
134
mJ
Avalanche current
IAR
40
A
Repetitive avalanche energy (Note 3)
EAR
5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.5
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 60 H, RG = 25 , IAR = 40 A
Note 3: Repetitive rating pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
相关PDF资料
PDF描述
2SK3089(2-10S2B) 40 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3090(2-10S1B) 45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3093LS 3 A, 400 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3095LS 5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3099LS 9 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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