参数资料
型号: 2SK3082(S)
元件分类: JFETs
英文描述: 0.15 ohm, POWER, FET
封装: LDPAK-3
文件页数: 1/12页
文件大小: 62K
代理商: 2SK3082(S)
2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-637A (Z)
2nd. Edition
Mar. 2001
Features
Low on-resistance
R
DS(on) = 0.055 typ.
High speed switching
4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
D
G
S
相关PDF资料
PDF描述
2SK3082(S) 0.15 ohm, POWER, FET
2SK3082L-E 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3116-ZJ 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3116-S 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SK3134L 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK3082STL-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3084 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
2SK3084(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SK3084(SM) 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-263AB
2SK3084-SM(Q) 制造商:Toshiba America Electronic Components 功能描述: