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参数资料
| 型号： | 2SK3082(S) |
| 元件分类： | JFETs |
| 英文描述： | 0.15 ohm, POWER, FET |
| 封装： | LDPAK-3 |
| 文件页数： | 9/12页 |
| 文件大小： | 62K |
| 代理商： | 2SK3082(S) |
2SK3082(L),2SK3082(S)
6
0.1
0.5
1
2
10
0.2
5
010
20
30
40
50
1000
200
500
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
8
12
16
20
0
1000
300
100
30
10
0.1
0.2
1
5
10
V
= 50 V
25 V
10 V
DD
500
200
100
20
50
10
5
I
= 10A
D
VGS
VDS
3
1
0.5
2
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
20
di / dt = 50 A / s
V
= 0, Ta = 25 °C
GS
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
V
= 10 V
25 V
50 V
DD
r
t
V
= 10 V, V
= 30 V
PW = 5 s, duty < 1 %
GS
DD
t f
d(on)
t
d(off)
t
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3082(S) | 0.15 ohm, POWER, FET |
| 2SK3082L-E | 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3116-ZJ | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3116-S | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3134L | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3082STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3084 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
| 2SK3084(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3084(SM) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-263AB |
| 2SK3084-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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