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参数资料
| 型号： | 2SK3082(S) |
| 文件页数： | 3/10页 |
| 文件大小： | 54K |
| 代理商： | 2SK3082(S) |
Datasheet Title
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
40
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
75
A
Drain peak current
I
D(pulse)
Note1
300
A
Body-drain diode reverse drain current
I
DR
75
A
Avalanche current
I
AP
Note3
50
A
Avalanche energy
E
AR
Note3
333
mJ
Channel dissipation
Pch Note
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
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相关代理商/技术参数 |
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|---|---|
| 2SK3082STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3084 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
| 2SK3084(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3084(SM) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-263AB |
| 2SK3084-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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