参数资料
型号: 2SK3085
元件分类: JFETs
英文描述: 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: LEAD FREE, 2-10P1B, SC-46, 3 PIN
文件页数: 1/6页
文件大小: 165K
代理商: 2SK3085
2SK3085
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π-MOSV)
2SK3085
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Low drain-source ON resistance: RDS (ON) = 1.7 (typ.)
High forward transfer admittance: |Yfs| = 3 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
3.5
Drain current
Pulse
(Note 1)
IDP
14
A
Drain power dissipation (Tc
= 25°C)
PD
75
W
Single pulse avalanche energy
(Note 2)
EAS
227
mJ
Avalanche current
IAR
3.5
A
Repetitive avalanche energy (Note 3)
EAR
7.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.67
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 28.8 mH, RG = 25 Ω, IAR = 3.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
相关PDF资料
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2SK3098 12 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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