- 您现在的位置：买卖IC网 > PDF目录30616 > 2SK30ATM-O N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 PDF资料下载
参数资料
| 型号： | 2SK30ATM-O |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封装： | 2-5F1C, SC-43, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 146K |
| 代理商： | 2SK30ATM-O |
2SK879
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK879
General Purpose and Impedance Converter and
Condenser Microphone Applications
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
10
mA
Drain power dissipation
PD
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
0.3
6.5
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.4
5.0
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.2
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
8.2
pF
Reverse transfer capacitance
Crss
VGD = 10 V, ID = 0, f = 1 MHz
2.6
pF
Noise figure
NF
VDS = 15 V, VGS = 0
RG = 100 kΩ, f = 120 Hz
0.5
dB
Note: IDSS classification R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Marking
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3112-ZJ | 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3112-AZ | 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3112 | 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3113B(1)-S27-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3113B-ZK-E1-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK30ATM-O(F) | 制造商:Toshiba 功能描述:Nch -50V 0.6mA to 1.4mA TO92 Bulk |
| 2SK30ATMR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 300UA I(DSS) | TO-92 |
| 2SK30ATMY | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-92 |
| 2SK30ATM-Y(F) | 制造商:Toshiba 功能描述:Nch -50V 1.2mA to 3.0mA TO92 |
| 2SK30AY | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。