参数资料
型号: 2SK3109-S
元件分类: JFETs
英文描述: 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封装: TO-262, MP-25 FIN CUT, 3 PIN
文件页数: 10/10页
文件大小: 268K
代理商: 2SK3109-S
Data Sheet D13332EJ3V0DS
7
2SK3109
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3) TO-263 (MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
相关PDF资料
PDF描述
2SK3109-ZJ 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3109 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3111-S 20 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SK3111-ZJ 20 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3113-AZ 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
相关代理商/技术参数
参数描述
2SK3109-ZJ 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK311 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)
2SK3110 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3110-AZ 制造商:Renesas Electronics 功能描述:Nch 200V 14A 180m@10V IsolatedTO220 Bulk
2SK3111 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE