- 您现在的位置：买卖IC网 > PDF目录50001 > 2SK3113-AZ 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 PDF资料下载
参数资料
| 型号： | 2SK3113-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封装： | MP-3, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 69K |
| 代理商： | 2SK3113-AZ |
1998, 2001
MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13336EJ2V0DS00 (2nd edition)
Date Published
January 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark 5 shows major revised points.
DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that
features a low gate charge and excellent switching
characteristic, and designed for high voltage applications
such as switching power supply, AC adapter.
FEATURES
Low On-state resistance
RDS(on) = 4.4
MAX. (VGS = 10 V, ID = 1.0 A)
Low gate charge
QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
Gate voltage rating ±30 V
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±2.0
A
Drain Current (pulse)
Note1
ID(pulse)
±8.0
A
Total Power Dissipation (TC = 25°C)
PT1
20
W
Total Power Dissipation (TA = 25°C)
Note2
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note3
IAS
2.0
A
Single Avalanche Energy
Note3
EAS
2.7
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. On glass epoxy board with 40
× 40 × 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V
, RG = 25 , VGS = 20
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3113
TO-251
2SK3113-Z
TO-252
5
(TO-251)
(TO-252)
5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3113 | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3114-AZ | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3114-AZ | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3115 | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3119 | 2 A, 20 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3113B | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B(1)-S27-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-S15 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3113B-S15-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-ZK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述:REN2SK3113B-ZK-E1-AY SWITCHING N-CHANNEL |
发布紧急采购，3分钟左右您将得到回复。