- 您现在的位置：买卖IC网 > PDF目录50001 > 2SK3113-AZ 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 PDF资料下载
参数资料
| 型号： | 2SK3113-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封装： | MP-3, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 69K |
| 代理商： | 2SK3113-AZ |
Data Sheet D13336EJ2V0DS
5
2SK3113
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS
(on)
-Drain
to
Source
On-state
Resistance
-
2
0
100
50
Tch - Channel Temperature - C
3
1
VGS = 10 V
4
1 A
6
7
5
8
9
ID = 2 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
1.5
1.0
0.5
0
100
10
1.0
0.1
Pulsed
0 V
VGS = 10 V
100
10
1
0.1
10000
1000
100
10
1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
0.1
1
10
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
100
10
1
0.1
VDD = 150 V
VGS = 10 V
RG = 10
td(off)
td(on)
tf
tr
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1.0
10
100
trr
-
Reverse
Recovery
Time
-
ns
0.1
ID - Drain Current - A
10000
1000
100
10
di/dt = 50 A/
s
VGS = 0 V
QG - Gate Charge - nC
V
DS
-Drain
to
Source
Voltage
-
V
08
412
16
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-Gate
to
Source
Voltage
-
V
16
14
12
10
8
6
4
2
0
VDS
ID = 2.0 A
VGS
800
VDD = 450 V
300 V
150 V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3113 | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3114-AZ | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3114-AZ | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3115 | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3119 | 2 A, 20 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3113B | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B(1)-S27-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-S15 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3113B-S15-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-ZK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述:REN2SK3113B-ZK-E1-AY SWITCHING N-CHANNEL |
发布紧急采购，3分钟左右您将得到回复。