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参数资料
| 型号： | 2SK3114-AZ |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 92K |
| 代理商： | 2SK3114-AZ |
1998
MOS FIELD EFFECT TRANSISTOR
2SK3114
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13337EJ2V0DS00 (2nd edition)
Date Published
January 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark 5 shows major revised points.
DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low on-state resistance:
RDS(on) = 2.2
MAX. (VGS = 10 V, ID = 2.0 A)
Low gate charge:
QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)
Gate voltage rating: ±30 V
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±4.0
A
Drain Current (pulse)
Note1
ID(pulse)
±16
A
Total Power Dissipation (TC = 25°C)
PT1
30
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
4.0
A
Single Avalanche Energy
Note2
EAS
10.7
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25
, VGS = 20
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3114
Isolated TO-220
5
(Isolated TO-220)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3114-AZ | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3115 | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3119 | 2 A, 20 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3123 | 15 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3126 | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3115 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SK3115-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk |
| 2SK3116 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
| 2SK3116B | 制造商:NEC 制造商全称:NEC 功能描述:7.5A600V |
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