参数资料
型号: 2SK3114-AZ
元件分类: JFETs
英文描述: 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-45F, ISOLATED TO-220, 3 PIN
文件页数: 4/8页
文件大小: 92K
代理商: 2SK3114-AZ
Data Sheet D13337EJ2V0DS
4
2SK3114
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
40
20
30
5
10
0
6 V
VGS = 10 V
8 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
15
10
5
0
100
10
1.0
0.1
VDS = 10V
Pulsed
Tch = 125 C
75 C
25 C
-25 C
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cutoff
Voltage
-
V
-50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
0
VDS = 10 V
ID = 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
10
ID - Drain Current - A
|y
fs
|
-
Forward
Transfer
Admittance
-
S
10
0.1
1.0
0.1
VDS = 10 V
Pulsed
Tch = -25 C
25 C
75 C
125 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
2.0
VGS - Gate to Source Voltage - V
R
DS
(on)
-Drain
to
Source
On-State
Resistance
-
9
1.0
0
515
0
3.0
ID = 4.0 A
Pulsed
2.0 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
10
100
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
9
2.0
0
3.0
VGS = 10 V
Pulsed
VGS = 20 V
相关PDF资料
PDF描述
2SK3114-AZ 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3115 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3119 2 A, 20 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3123 15 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3126 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK3115 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR
2SK3115-AZ 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk
2SK3116 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
2SK3116-AZ 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk
2SK3116B 制造商:NEC 制造商全称:NEC 功能描述:7.5A600V