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参数资料
| 型号： | 2SK3113-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封装： | MP-3, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 69K |
| 代理商： | 2SK3113-AZ |
Data Sheet D13336EJ2V0DS
3
2SK3113
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tch - Channel Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
040
20
60
100
140
80
120
160
100
80
60
40
20
0
TC - Case Temperature - C
P
T
-Total
Power
Dissipation
-
W
080
20
40
60
100
140
120
160
40
30
20
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
5
15
25
35
FORWARD BIAS SAFE OPERATING AREA
10
100
1000
ID
-
Drain
Current
-
A
1
VDS - Drain to Source Voltage - V
100
10
1
0.1
Po
wer
Dissipation
Limited
100
s
10
ms
1
ms
100
ms
PW
=
10
s
ID(pulse)
ID(DC)
TC = 25C
Single Pulse
DC
R
DS(on)
Limited
(@V
GS
= 20
V)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-
Transient
Thermal
Resistance
-
C/
W
100 m
1
10
100
1000
10 m
1 m
100
10
100
10
1
0.1
0.01
Rth(ch-A) = 125C/W
Rth(ch-C) = 6.25C/W
Single Pulse
5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3113 | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3114-AZ | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3114-AZ | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3115 | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3119 | 2 A, 20 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3113B | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B(1)-S27-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-S15 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3113B-S15-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-ZK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述:REN2SK3113B-ZK-E1-AY SWITCHING N-CHANNEL |
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