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参数资料
| 型号： | 2SK3109-ZJ |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263, MP-25ZJ, 3 PIN |
| 文件页数： | 8/10页 |
| 文件大小： | 268K |
| 代理商： | 2SK3109-ZJ |
Data Sheet D13332EJ3V0DS
5
2SK3109
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100
120
140
160
20
40
60
80
100
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
20
40
60
80
100
120
140
160
70
60
50
40
30
20
10
0
FORWARD BIAS SAFE OPERATING AREA
10
100
1000
ID
-
Drain
Current
-
A
1
VDS - Drain to Source Voltage - V
100
10
1
0.01
RDS(on)
Limited
ID(pulse)
ID(DC)
TC = 25C
Single pulse
0.1
PW
=
10
s
100
s
1 ms
3 ms
10
ms
Po
wer
Dissipation
Limited
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-
Transient
Thermal
Resistance
-
C/
W
1
0.01
0.1
10
100
1 m
10 m
100 m
1
10
1000
100
Single pulse
10
Rth(ch-A) = 83.3C/W
Rth(ch-C) = 2.5C/W
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3109 | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3111-S | 20 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3111-ZJ | 20 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3113-AZ | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3113 | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK311 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK3110 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3110-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 14A 180m@10V IsolatedTO220 Bulk |
| 2SK3111 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3111-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 20A 180m@10V TO220AB Bulk |
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