参数资料
型号: 2SK3112-AZ
元件分类: JFETs
英文描述: 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-25, 3 PIN
文件页数: 7/8页
文件大小: 79K
代理商: 2SK3112-AZ
Data Sheet D13335EJ1V0DS
7
2SK3112
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
2)TO-262
3)TO-263 (MP-25ZJ)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8±0.2
相关PDF资料
PDF描述
2SK3112 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3113B(1)-S27-AY 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
2SK3113B-ZK-E1-AY 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK3113B-ZK-E2-AY 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK3113B-ZK-E1-AY 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
相关代理商/技术参数
参数描述
2SK3112S 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262AA
2SK3112-S 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
2SK3112-Z 制造商:Renesas Electronics Corporation 功能描述:
2SK3112ZJ 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-263AB
2SK3112-ZJ 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE