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参数资料
| 型号： | 2SK3114B-S17-AY |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220, MP-45F, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 246K |
| 代理商： | 2SK3114B-S17-AY |
MOS FIELD EFFECT TRANSISTOR
2SK3114B
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18062EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK3114B is N-channel MOS FET device that features a low
gate charge and excellent switching characteristics, and designed
for high voltage applications such as switching power supply, AC
adapter.
FEATURES
Low on-state resistance
RDS(on) = 2.2
Ω MAX. (VGS = 10 V, ID = 2.0 A)
Low gate charge
QG = 13.6 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)
Gate voltage rating : ±30 V
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±4.0
A
Drain Current (pulse)
Note1
ID(pulse)
±16
A
Total Power Dissipation (TC = 25°C)
PT1
30
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
4.0
A
Single Avalanche Energy
Note2
EAS
10.7
mJ
Notes 1. PW
≤ 10
μs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3114B-S17-AY
Note
Isolated TO-220
Note Pb-free (This product does not contain Pb in
External electrode.)
(Isolated TO-220)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3116B-S19-AY | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3116B-S19-AY | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3116 | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3116-ZJ | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3120 | 2 A, 30 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3115 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SK3115-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk |
| 2SK3116 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
| 2SK3116B | 制造商:NEC 制造商全称:NEC 功能描述:7.5A600V |
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