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参数资料
| 型号： | 2SK3115 |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 69K |
| 代理商： | 2SK3115 |
Data Sheet D13338EJ2V0DS
4
2SK3115
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
40
20
30
5
15
20
10
0
25
6 V
VGS = 10 V
8 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
15
10
5
0
100
10
1.0
0.1
VDS = 10 V
Pulsed
Tch = 125C
75C
Tch = 25C
25C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
0
VDS = 10 V
ID = 1mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
10
ID - Drain Current - A
|y
fs
|
-
Forward
Transfer
Admittance
-
S
10
0.1
1.0
0.1
VDS = 10 V
Pulsed
Tch =
25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
820
16
2.0
VGS - Gate to Source Voltage - V
R
DS
(on)
-Drain
to
Source
On-state
Resistance
-
ID = 6.0 A
3.0 A
1.0
0
412
Pulsed
0
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
10
100
0.8
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
0.4
2.0
0
1.2
1.6
VGS = 10 V
20 V
Pulsed
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3119 | 2 A, 20 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3123 | 15 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3126 | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3127(2-10S2B) | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3127(2-10S1B) | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3115-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk |
| 2SK3116 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
| 2SK3116B | 制造商:NEC 制造商全称:NEC 功能描述:7.5A600V |
| 2SK3116-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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