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参数资料
| 型号： | 2SK3115 |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 69K |
| 代理商： | 2SK3115 |
Data Sheet D13338EJ2V0DS
6
2SK3115
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
1 m
10 m
100
L - Inductive Load - H
IAS
-
Single
Avalanche
Current
-
A
1.0
10
0.1
10
RG = 25
VDD = 150 V
VGS = 20
→ 0 V
Starting Tch = 25C
E
AS = 24
mJ
IAS = 6 A
SINGLE AVALANCHE ENERGY
DERATING FACTOR
75
150
125
120
100
80
60
40
20
0
Starting Tch - Starting Channel Temperature - C
Energy
Derating
Factor
-
%
50
100
25
VDD = 150 V
RG = 25
VGS = 20
→ 0 V
IAS
≤ 6 A
PACKAGE DRAWING (Unit: mm)
10.0 ± 0.3
3.2 ± 0.2
φ
4.5 ± 0.2
2.7 ± 0.2
2.5 ± 0.1
0.65 ± 0.1
1.5 ± 0.2
2.54
1.3 ± 0.2
2.54
0.7 ± 0.1
4
±
0.2
15.0
±
0.3
12.0
±
0.2
3
±
0.1
12 3
1.Gate
2.Drain
3.Source
13.5
MIN.
Isolated TO-220(MP-45F)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
EQUIVALENT CIRCUIT
Body
Diode
Source (S)
Drain (D)
Gate (G)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3119 | 2 A, 20 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3123 | 15 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3126 | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3127(2-10S2B) | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3127(2-10S1B) | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3115-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk |
| 2SK3116 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
| 2SK3116B | 制造商:NEC 制造商全称:NEC 功能描述:7.5A600V |
| 2SK3116-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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