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参数资料
| 型号： | 2SK3117 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-16H1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 718K |
| 代理商： | 2SK3117 |
2SK3117
2006-11-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK3117
Chopper Regulator DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.21 (typ.)
High forward transfer admittance
: |Yfs| = 17 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDSS = 500 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
500
V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
20
A
Drain current
Pulse (Note 1)
IDP
80
A
Drain power dissipation (Tc
= 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
960
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.833
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.08 mH, RG = 25 , IAR = 20 A
Note 3: Repetitive rating pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
—
TOSHIBA
2-16H1B
Weight: 4.6 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3117_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3119 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK312 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 12A I(D) | TO-3 |
| 2SK3120 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3121 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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