- 您现在的位置：买卖IC网 > PDF目录55798 > 2SK3117 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3117 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-16H1B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 718K |
| 代理商： | 2SK3117 |
2SK3117
2006-11-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
—
100
μA
Drainsource breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 10 A
—
0.21
0.27
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
10
17
—
S
Input capacitance
Ciss
—
3720
—
Reverse transfer capacitance
Crss
—
340
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
1165
—
pF
Rise time
tr
—
30
—
Turnon time
ton
—
70
—
Fall time
tf
—
50
—
Switching time
Turnoff time
toff
—
290
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
80
—
Gatesource charge
Qgs
—
48
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 6 A
—
32
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
20
A
Pulse drain reverse current
(Note 1)
IDRP
—
80
A
Forward voltage (diode)
VDSF
VDR = 20 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
540
—
ns
Reverse recovery charge
Qrr
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
5.4
—
μC
Marking
K3117
Lot No.
Part No. (or abbreviation code)
TOSHIBA
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3125 | 70 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3133(S) | 0.018 ohm, POWER, FET |
| 2SK3133(L) | 0.018 ohm, POWER, FET |
| 2SK3148-E | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3159-E | 50 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3117_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3119 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK312 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 12A I(D) | TO-3 |
| 2SK3120 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3121 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
发布紧急采购，3分钟左右您将得到回复。