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参数资料
| 型号： | 2SK3119 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 20 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PCP, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 185K |
| 代理商： | 2SK3119 |
2SK3119
No.6098–3/4
SW Time - I D
A S O
P D - Ta
P D - Tc
VDD=10V
VGS=4V
IDP=8A
ID=2A
Operation in this area
is limited by RDS(on).
2
3
5
7
2
3
5
7
2
3
5
7
23
5
7
23
5
7
2
3
2
3
5
7
2
3
5
7
2
3
5
7
72
3
5
7
2
35
7
Ciss,
Coss,
Crss
–
p
F
Ciss, Coss, Crss - VDS
VGS - Qg
f=1MHz
Ciss
Coss
Crss
2
3
5
7
2
3
5
7
VDS=10V
ID=2A
td(on)
t r
td(off)
tf
100m
s
10ms
1ms
100
s
DC
operation
100
10
1000
4
26
8
10
1214161820
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10
1.0
100
1000
1.0
0.1
0.01
1.0
10
1.0
0.1
20
60
40
80
120
100
140
160
0
0.2
0.4
0.6
0.8
1.0
1.3
1.2
1.4
20
60
40
80
120
100
140
160
0
1.0
2.0
3.0
3.5
4.0
0
Drain-to-Source Voltage,VDS –V
Total Gate Charge, Qg
–
nC
Gate-to-Source
Voltage,
V
GS
–V
Drain Current, ID –A
Switching
Time,
SW
Time
–
n
s
Drain
Current,
I
D
–A
Tc= 25C
1pulse
Case Temperature, Tc –
°C
Allowable
Power
Dissipation,
P
D
–W
Ambient Temperature, Ta –
°C
Allowable
Power
Dissipation,
P
D
–W
Mounted
on
a
ceramic
board
(250mm
2×
0.8mm)
VDS=10V
VGS=0
23
5
7
23
57
2
3
57
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
Tc=-25
°C
25°
C
75°
C
Tc=-25
°C
25
°C
75
°C
I F - VSD
0.1
2
3
5
7
2
3
5
7
0.01
0.1
1.0
10
0.01
0.001
0.1
1.0
10
00.2
0.4
0.6
1.0
0.8
1.2
1.4
Drain Current, ID –A
Forward
Transfer
Admittance,
|y
fs
|–S
Diode Forward Voltage, VSD –V
Forward
Current,
I F
–A
| yfs | - ID
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK312 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 12A I(D) | TO-3 |
| 2SK3120 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3121 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3122 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3123 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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