参数资料
型号: 2SK3136
元件分类: JFETs
英文描述: 0.01 ohm, POWER, FET, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 1/10页
文件大小: 50K
代理商: 2SK3136
2SK3136
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-696B (Z)
3rd. Edition
Feb. 1999
Features
Low on-resistance
R
DS(on) =4.5m typ.
Low drive current
4V gate drive device can be driven from 5V source
Outline
TO–220AB
1
2
3
1. Gate
2. Drain(Flange
3. Source
D
G
S
相关PDF资料
PDF描述
2SK3141-E 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3142-E 60 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3147L-E 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3147STL-E 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3155-E 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
2SK3136-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3140 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3140(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK3141 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3141-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching