参数资料
型号: 2SK3136
元件分类: JFETs
英文描述: 0.01 ohm, POWER, FET, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 6/10页
文件大小: 50K
代理商: 2SK3136
2SK3136
5
0
48
12
16
20
16
12
8
4
–50
0
50
100
150
200
0
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(m
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
V
= 10 V
GS
4 V
Pulse Test
R
(m
)
DS(on)
0.5
0.4
0.3
0.2
0.1
Pulse Test
I
= 50 A
D
20 A
10 A
1
30
100
3
100
2
5
1
10
300
20
10
V
= 4 V
GS
10 V
Pulse Test
10, 20, 50 A
I
= 50 A
D
10, 20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25 °C
75 °C
25 °C
V
= 10 V
Pulse Test
DS
50
1000
相关PDF资料
PDF描述
2SK3141-E 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3142-E 60 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3147L-E 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3147STL-E 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3155-E 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
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2SK3140 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3140(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK3141 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3141-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching