参数资料
型号: 2SK3136
元件分类: JFETs
英文描述: 0.01 ohm, POWER, FET, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 8/10页
文件大小: 50K
代理商: 2SK3136
2SK3136
7
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
(V)
SDF
Reverse
Drain
Current
I
(A)
F
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
V
= 0, –5 V
GS
5 V
10 V
100
80
60
40
20
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50
Vin
15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
E
=
L I
2
1
V
– V
AR
AP
DSS
DD
2
Avalanche Test Circuit
Avalanche Waveform
500
400
300
200
100
25
50
75
100
125
150
0
Channel Temperature Tch (°C)
Repetitive
Avalanche
Energy
E
(mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
= 50 A
V
= 25 V
duty < 0.1 %
Rg > 50
AP
DD
相关PDF资料
PDF描述
2SK3141-E 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3142-E 60 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3147L-E 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3147STL-E 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3155-E 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
2SK3136-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3140 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3140(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK3141 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3141-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching