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参数资料
| 型号： | 2SK3136 |
| 元件分类： | JFETs |
| 英文描述： | 0.01 ohm, POWER, FET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 50K |
| 代理商： | 2SK3136 |
2SK3136
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
40
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
75
A
Drain peak current
I
D(pulse)
Note 1
300
A
Body-drain diode reverse drain current
I
DR
75
A
Avalanche current
I
AP
Note 3
50
A
Avalanche energy
E
AR
Note 3
333
mJ
Channel dissipation
Pch Note
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3141-E | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3142-E | 60 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3147L-E | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3147STL-E | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3155-E | 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3136-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3140 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3140(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3141 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3141-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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