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参数资料
| 型号： | 2SK3147STL-E |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-63, DPAK-3 |
| 文件页数： | 1/9页 |
| 文件大小： | 215K |
| 代理商： | 2SK3147STL-E |
2SK3147(L), 2SK3147(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1072-0300
Rev.3.00
Aug 17, 2009
Features
Low on-resistance
RDS = 0.1 Ω typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
1
2 3
4
1
2
3
4
D
G
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
5
A
Drain peak current
ID(pulse)
Note1
20
A
Body-drain diode reverse drain current
IDR
5
A
Avalanche current
IAP
Note3
5
A
Avalanche energy
EAR
Note3
2.5
mJ
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 μs, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50 Ω
REJ03G1072-0300 Rev.3.00 Aug 17, 2009
Page 1 of 8
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