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参数资料
| 型号： | 2SK3147STL-E |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-63, DPAK-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 215K |
| 代理商： | 2SK3147STL-E |
2SK3147(L), 2SK3147(S)
REJ03G1072-0300 Rev.3.00 Aug 17, 2009
Page 2 of 8
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
100
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG = ±100 μA, VDS = 0
Gate to source leak current
IGSS
—
±10
μA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
μA
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
0.1
0.13
Ω
ID = 3 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
—
0.13
0.17
Ω
ID = 3 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
3.5
6
—
S
ID = 3 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
420
—
pF
Output capacitance
Coss
—
185
—
pF
Reverse transfer capacitance
Crss
—
100
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
10
—
ns
Rise time
tr
—
35
—
ns
Turn-off delay time
td(off)
—
110
—
ns
Fall time
tf
—
60
—
ns
ID = 3 A, VGS = 10V,
RL = 10 Ω
Body–drain diode forward voltage
VDF
—
0.85
—
V
IF = 5 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
85
—
ns
IF = 5 A, VGS = 0
diF/ dt = 50 A/ μs
Note:
4. Pulse test
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