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参数资料
| 型号： | 2SK3147STL-E |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-63, DPAK-3 |
| 文件页数： | 5/9页 |
| 文件大小： | 215K |
| 代理商： | 2SK3147STL-E |
2SK3147(L), 2SK3147(S)
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
γ s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (
°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Ω
Vin
15 V
0
I D
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L I
AP
2
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform
10
8
6
4
2
0
0.4
0.8
1.2
1.6
2.0
VGS = 0, –5 V
10 V
5 V
2.5
2.0
1.5
1.0
0.5
25
50
75
100
125
150
0
Pulse Test
IAP= 5 A
VDD = 50 V
duty < 0.1 %
Rg > 50
Ω
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 6.25
°C/W, Tc = 25°C
θ
γ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot
Pulse
Tc = 25
°C
REJ03G1072-0300 Rev.3.00 Aug 17, 2009
Page 5 of 8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3148 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK3149-E | 制造商:Renesas Electronics Corporation 功能描述: |
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