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参数资料
| 型号： | 2SK3136 |
| 元件分类： | JFETs |
| 英文描述： | 0.01 ohm, POWER, FET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 50K |
| 代理商： | 2SK3136 |
2SK3136
4
Main Characteristics
200
150
100
0
50
100
150
200
0.1
0.3
1
3
10
30
100
80
60
40
20
0
2
468
10
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25°C
10
s
100
s
1 ms
DC
Operation
(Tc
=
25°C)
Operation in
this area is
limited by R DS(on)
PW
=
10
ms
(1
shot)
3.5 V
3 V
50
V
= 10 V
GS
5 V
4 V
2.5 V
100
80
60
40
20
0
12
34
5
Tc = –25°C
25°C
75°C
V
= 10 V
Pulse Test
DS
Pulse Test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3141-E | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3142-E | 60 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3147L-E | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3147STL-E | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3155-E | 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3136-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3140 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3140(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3141 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3141-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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