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参数资料
| 型号： | 2SK3136 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 11/12页 |
| 文件大小： | 67K |
| 代理商： | 2SK3136 |
2SK3136
6
0.1
0.3
1
3
10
30
100
010
20
30
40
50
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
200
20
10
0.1 0.2
2
10
100
1000
500
100
200
20
50
10
di / dt = 50 A /
s
V
= 0, Ta = 25
°C
GS
300
20
1
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
100
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
I
= 75 A
D
VGS
VDS
DD
V
= 40 V
25 V
10 V
0.5
5
500
50
V
= 10 V, V
= 30 V
PW = 5
s, duty < 1 %
GS
DD
r
t
d(on)
t
d(off)
t
t f
30000
V
= 40 V
25 V
10 V
DD
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PDF描述 |
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| 2N6190R1 | 5000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2SJ479S | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ506S | 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3136-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3140 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3140(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3141 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3141-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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