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参数资料
| 型号： | 2SK3142-E |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 101K |
| 代理商： | 2SK3142-E |
2SK3142
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
60
A
Drain peak current
ID(pulse)
Note 1
240
A
Body-drain diode reverse drain current
IDR
60
A
Avalanche current
IAP
Note 3
35
A
Avalanche energy
EAR
Note 3
122
mJ
Channel dissipation
Pch
Note 2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
—
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
—
±0.1
A
VGS =
±20 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
Note 4
—
4.0
5.0
m
ID = 30 A, VGS = 10 V
Note 4
Static drain to source on state
resistance
RDS(on)
—
5.5
8.5
m
ID = 30 A, VGS = 4 V
Note 4
Forward transfer admittance
|yfs|
45
75
—
S
ID = 30 A, VDS = 10 V
Note 4
Input capacitance
Ciss
—
6800
—
pF
Output capacitance
Coss
—
1550
—
pF
Reverse transfer capacitance
Crss
—
500
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Total gate charge
Qg
—
130
—
nC
Gate to source charge
Qgs
—
16
—
nC
Gate to drain charge
Qgd
—
30
—
nC
VDD = 10 V, VGS = 10 V,
ID = 60 A
Turn-on delay time
td(on)
—
50
—
ns
Rise time
tr
—
340
—
ns
Turn-off delay time
td(off)
—
560
—
ns
Fall time
tf
—
350
—
ns
VGS = 10 V, ID = 30 A,
RL = 0.33
Body–drain diode forward voltage
VDF
—
1.0
—
V
IF = 60 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
70
—
ns
IF = 60 A, VGS = 0
diF/ dt = 50 A/
s
Note:
4. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3147 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3147(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-251 |
| 2SK3147(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-252AA |
| 2SK3147L | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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