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参数资料
| 型号： | 2SK3151 |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 67K |
| 代理商： | 2SK3151 |
2SK3151
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 100 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—
11.5
15
m
I
D = 25A, VGS = 10V
Note4
resistance
R
DS(on)
—1625m
I
D = 25A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|30
50
—
S
I
D = 25A, VDS = 10V
Note4
Input capacitance
Ciss
—
4000
—
pF
V
DS = 10V
Output capacitance
Coss
—
1650
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
590
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
30
—
ns
I
D = 25A, VGS = 10V
Rise time
t
r
—
280
—
ns
R
L = 1.2
Turn-off delay time
t
d(off)
—
830
—
ns
Fall time
t
f
—
450
—
ns
Body–drain diode forward
voltage
V
DF
—
0.95
—
V
I
F = 50A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
100
—
V
I
F = 50A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3151(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3151-E | 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,100V,50A,11.5m ohm,TO-3P |
| 2SK3152 | 制造商:Renesas Electronics Corporation 功能描述:2SK3152 - Rail/Tube |
| 2SK3152-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 120V 10A 3-Pin(3+Tab) TO-220FM Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 120V 10A 3-Pin(3+Tab) TO-220FM |
| 2SK3153 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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