参数资料
型号: 2SK3152-E
元件分类: JFETs
英文描述: 10 A, 120 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TO-220FM, 3 PIN
文件页数: 6/12页
文件大小: 68K
代理商: 2SK3152-E
2SK3152
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-732 (Z)
1st. Edition
Feb. 1999
Features
Low on-resistance
R
DS =100m typ.
High speed switching
4V gate drive device can be driven from 5V source
Outline
1
2
3
TO–220FM
1. Gate
2. Drain
3. Source
D
G
S
相关PDF资料
PDF描述
2SK3161L-E 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3161L-E 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
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相关代理商/技术参数
参数描述
2SK3153 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3153-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3154 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3154-E 制造商:Renesas Electronics Corporation 功能描述:
2SK3155 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching