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参数资料
| 型号： | 2SK3159-E |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 106K |
| 代理商： | 2SK3159-E |
2SK3159
Rev.4.00 May 15, 2006 page 4 of 7
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Switching Characteristics
Switching
Time
t
(ns)
Drain Current ID (A)
100
–50
0
50
100
150
200
0
20
40
60
80
0.1
0.3
1
30
100
200
2
5
10
20
1
0.5
Pulse Test
10
50
ID = 50 A
VGS = 4 V
10 V
10, 20 A
50 A
500
3
100
0.1
1
3
10
30
0.3
010
20
30
40
50
30000
3000
10000
1000
100
300
200
0
40
80
120
160
20
80
160
240
320
400
0
4
8
12
16
5000
1000
500
200
50
100
0.1 0.2
1
5
10
1000
500
200
50
100
20
10
ID = 50 A
VGS
VDS
20
10
0.5
250
20
100
VDD = 100 V
50 V
25 V
VDD = 100 V
50 V
25 V
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
2000
VDS = 10 V
Pulse Test
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
tf
tr
td(off)
td(on)
VGS = 10 V, VDD = 30 V
PW = 5
s, duty ≤ 1 %
Tc = –25°C
25°C
75°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK315E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.5MA I(DSS) | SPAK |
| 2SK315F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SPAK |
| 2SK315G | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 10MA I(DSS) | SPAK |
| 2SK316 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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