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参数资料
| 型号： | 2SK3161(L) |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 60K |
| 代理商： | 2SK3161(L) |
2SK3161(L),2SK3161(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
200
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—
90
115
m
I
D = 8A, VGS = 10V
Note4
resistance
R
DS(on)
—
95
125
m
I
D = 8A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|16
20
—
S
I
D = 8A, VDS = 10V
Note4
Input capacitance
Ciss
—
1600
—
pF
V
DS = 10V
Output capacitance
Coss
—
510
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
250
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
20
—
ns
I
D = 8A, VGS = 10V
Rise time
t
r
—
120
—
ns
R
L = 3.75
Turn-off delay time
t
d(off)
—
400
—
ns
Fall time
t
f
—
170
—
ns
Body–drain diode forward
voltage
V
DF
—
0.85
—
V
I
F = 15A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
100
—
ns
I
F = 15A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3161L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3161S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161STR-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) LDPAK(S) T/R Cut Tape |
| 2SK3162 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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