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参数资料
| 型号： | 2SK3161(L) |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 9/12页 |
| 文件大小： | 60K |
| 代理商： | 2SK3161(L) |
2SK3161(L),2SK3161(S)
6
0.1
0.3
1
3
10
30
100
010
20
30
40
50
2000
10000
1000
100
200
500
200
160
120
80
40
0
20
16
12
8
4
40
80
120
160
200
0
1000
500
50
100
20
10
200
500
300
30
100
3
10
1
0.1
0.3
1
3
10
30 100
di / dt = 50 A /
s
V
= 0, Ta = 25
°C
GS
10
20
50
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
I
= 15 A
D
VGS
VDS
V
= 150 V
100 V
50 V
DD
t f
r
t
d(on)
t
d(off)
t
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
V
= 10 V, V
= 30 V
PW = 5
s, duty < 1 %
GS
DD
V
= 150 V
100 V
50 V
DD
5000
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PDF描述 |
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| 2SK322WS01 | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3161L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3161S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161STR-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) LDPAK(S) T/R Cut Tape |
| 2SK3162 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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