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参数资料
| 型号： | 2SK3210L |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 4/9页 |
| 文件大小： | 157K |
| 代理商： | 2SK3210L |
2SK3210(L), 2SK3210(S)
Rev.3.00 Sep. 30, 2004 page 4 of 8
250
200
150
100
50
–40
0
40
80
120
160
0
0.1 0.2
1
520
30
1
3
0.3
0.1
10
ID = 20 A
VGS = 4 V
10 V
5, 10 A
100
0.5
2
50 100
25
°C
Tc = –25
°C
75
°C
5, 10 A
20 A
Pulse Test
VDS = 10 V
Pulse Test
Case Temperature
Tc
(
°C)
Drain
to
Source
On
State
Resistance
R
DS(on)
(m
)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current
ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward
Transfer
Admittance
|yfs|
(S)
0.1
1
3
10
100
0.3
30
010
20
30
40
50
10000
1000
3000
300
10
30
100
500
400
300
200
100
0
20
16
12
8
4
40
80
120
160
200
0
5000
500
200
100
50
0.1 0.2
1
5
10
1000
200
100
20
50
10
500
ID = 30A
VGS
VDS
20
10
0.5
2
20
VDD = 100 V
50 V
25 V
VDD = 100 V
50 V
25 V
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
1000
tr
VGS = 10 V, VDD = 30 V
PW = 5
s, duty < 1 %
tf
td(on)
td(off)
50
2000
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
trr
(ns)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
Capacitance
C
(pF)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3210STL | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3214 | 10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3217-01MR | 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK322-P | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK322-S | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3210S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3210S-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3210STL | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3211 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3211(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262VAR |
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