参数资料
型号: 2SK3210L
元件分类: JFETs
英文描述: 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LDPAK-3
文件页数: 5/9页
文件大小: 157K
代理商: 2SK3210L
2SK3210(L), 2SK3210(S)
Rev.3.00 Sep. 30, 2004 page 5 of 8
0
0.4
0.8
1.2
1.6
2.0
25
50
75
100
125
150
0
VGS = 10 V
50
40
30
20
10
IAP = 30 A
VDD = 50 V
duty < 0.1 %
Rg > 50
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50
Vin
15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
EAR =
× L × I
AP
2
×
2
1
V
– V
DSS
DD
100
80
60
40
20
0, –5 V
5 V
Pulse Test
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (
°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Test Circuit
Avalanche Waveform
Pulse Width PW (s)
Normalized
Transient
Thermal
Impedance
γ
s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
θch – c(t) = γs (t) × θch – c
θch – c = 1.25°C/W, Tc = 25°C
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pu
lse
相关PDF资料
PDF描述
2SK3210STL 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3214 10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3217-01MR 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK322-P 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK322-S 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
相关代理商/技术参数
参数描述
2SK3210S 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3210S-E 制造商:Renesas Electronics Corporation 功能描述:
2SK3210STL 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3211 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3211(L) 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262VAR