参数资料
型号: 2SK3225-AZ
元件分类: 小信号晶体管
英文描述: 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
封装: MP-3, 3 PIN
文件页数: 2/8页
文件大小: 403K
代理商: 2SK3225-AZ
Data Sheet D13798EJ3V0DS
2
2SK3225
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 17 A
13
18
m
RDS(on)2
VGS = 4.0 V, ID = 17 A
18
27
m
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 17 A
13
27
S
Drain Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Input Capacitance
Ciss
VDS = 10 V
2100
pF
Output Capacitance
Coss
VGS = 0 V
550
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
220
pF
Turn-on Delay Time
td(on)
ID = 17 A
32
ns
Rise Time
tr
VGS = 10 V
300
ns
Turn-off Delay Time
td(off)
VDD = 30 V
110
ns
Fall Time
tf
RG = 10
140
ns
Total Gate Charge
QG
ID = 34 A
45
nC
Gate to Source Charge
QGS
VDD = 48 V
7
nC
Gate to Drain Charge
QGD
VGS = 10 V
13
nC
Body Diode Forward Voltage
VF(S-D)
IF = 34 A, VGS = 0 V
0.94
V
Reverse Recovery Time
trr
If = 34 A, VGS = 0 V
60
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s95
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
#
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