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参数资料
| 型号： | 2SK3225-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封装： | MP-3, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 403K |
| 代理商： | 2SK3225-AZ |
Data Sheet D13798EJ3V0DS
4
2SK3225
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
1
4
2
3
1000
100
10
1
0.1
56
0
TA =
50C
25C
75C
150C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
2
3
4
160
200
1
Pulsed
VGS = 10 V
VGS = 4.0 V
120
80
40
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|y
fs
|-
Forward
Transfer
Admittance
-
S
VDS = 10 V
Pulsed
0.1
1
10
100
10
100
0.1
TA = 150C
75C
25C
50C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
05
20
10
30
10
15
Pulsed
ID = 17 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
10
1
20
30
100
1000
Pulsed
0
VGS = 4.0 V
10 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS = 10 V
ID = 1 mA
50
0
50
100
150
0
1.0
2.0
1.5
0.5
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PDF描述 |
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| 2SK3668-ZK | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3669 | 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3680-01 | 52 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3225-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3225-Z(AZ) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SK3228 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 80V 75A 3PIN TO-220AB - Rail/Tube |
| 2SK3228-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 80V 75A 3-Pin(3+Tab) TO-220AB |
| 2SK3229 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 80V 60A 3PIN TO-220CFM - Rail/Tube |
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