参数资料
型号: 2SK3230C
元件分类: 小信号晶体管
英文描述: 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封装: TUSM, SC-89, 3 PIN
文件页数: 1/5页
文件大小: 127K
代理商: 2SK3230C
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JUNCTION FIELD EFFECT TRANSISTOR
2SK3230C
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D18894EJ1V0DS00 (1st edition)
Date Published August 2007 NS
Printed in Japan
2007
DESCRIPTION
The 2SK3230C contains a diode and high resistivity
between its gates and sources, for achieving short stability
time during power-on. In addition, because of its compact
package and low noise, the 2SK3230C is especially suitable
for compact ECMs for audio or mobile devices such as cell-
phones.
FEATURES
Low noise:
108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
Containing a diode and high resistivity, short stability time is
achieved during power-on.
Small package: SC-89 (TUSM)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3230C
SC-89 (TUSM)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS =
1.0 V)
VDSX
20
V
Gate to Drain Voltage
VGDO
20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PT
100
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
55 to +125
°C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
1.6
±0.1
0.5
±0.05
0.8
±0.1
0.4
2
0.5
1.6 ±0.1
3
1
0.1
+0.1
–0.05
0.2
+0.1
–0
EQUIVALENT CIRCUIT
3
2
1
1: Source
2: Drain
3: Gate
相关PDF资料
PDF描述
2SK3230C 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3233-E 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3234-E 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3239STL-E 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3239L-E 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
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