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参数资料
| 型号： | 2SK3230C |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | TUSM, SC-89, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 127K |
| 代理商： | 2SK3230C |
Data Sheet D18894EJ1V0DS
2
2SK3230C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Cut-off Current
IDSS
VDS = 2.0 V, VGS = 0 V
90
200
430
μ A
Gate Cut-off Voltage
VGS(off)
VDS = 2.0 V, ID = 1.0
μA
0.37
1.0
V
Forward Transfer Admittance
| yfs1 |
VDS = 2.0 V, ID = 30
μA, f = 1.0 kHz
300
480
μS
| yfs2 |
VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz
750
1300
μS
Input Capacitance
Ciss
VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz
4.0
pF
Voltage Gain
GV
VDD = 2.0 V, C = 5 pF, RL = 2.2 k
Ω,
1.0
dB
VIN = 10 mV, f = 1 kHz
Noise Voltage
NV
VDD = 2.0 V, C = 5 pF, RL = 2.2 k
Ω,
108.5
dB
A-curve
IDSS CLASSIFICATION
MARKING
EE
EF
EH
EJ
IDSS (
μA)
90 to 180
150 to 240
210 to 350
320 to 430
VOLTAGE GAIN TEST CIRCUIT
C
RL
VDD
Out
NOISE VOLTAGE TEST CIRCUIT
C
RL
VDD
NV (r.m.s)
JIS A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3230C | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3233-E | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3234-E | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3239STL-E | 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3233 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3233(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3234 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:2SK3234 |
| 2SK3234(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3235 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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