参数资料
型号: 2SK3233-E
元件分类: JFETs
英文描述: 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220CFM, 3 PIN
文件页数: 2/7页
文件大小: 84K
代理商: 2SK3233-E
2SK3233
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
5
A
Drain peak current
ID (pulse)
Note 1
20
A
Body-drain diode reverse drain current
IDR
5
A
Body-drain diode reverse drain peak current
IDR (pulse)
Note 1
20
A
Avalanche current
IAP
Note 3
5
A
Channel dissipation
Pch
Note 2
30
W
Channel to case thermal impedance
θ ch-c
4.17
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Tch
≤ 150°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
500
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
±0.1
A
VGS =
±30 V, VDS = 0
Zero gate voltage drain current
IDSS
1
A
VDS = 500 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
3.0
4.0
V
ID = 1 mA, VDS = 10 V
Static drain to source on state resistance
RDS (on)
1.1
1.5
ID = 2.5 A, VGS = 10 V
Note 4
Forward transfer admittance
|yfs|
3.0
4.5
S
ID = 2.5 A, VDS = 10 V
Note 4
Input capacitance
Ciss
580
pF
Output capacitance
Coss
70
pF
Reverse transfer capacitance
Crss
13
pF
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
20
ns
Rise time
tr
15
ns
Turn-off delay time
td (off)
65
ns
Fall time
tf
15
ns
ID = 2.5 A
VGS = 10 V
RL = 100
Rg = 10
Total gate charge
Qg
15
nC
Gate to source charge
Qgs
3
nC
Gate to drain charge
Qgd
8
nC
VDD = 400 V
VGS = 10 V
ID = 5 A
Body-drain diode forward voltage
VDF
0.85
1.3
V
IF = 5 A, VGS = 0
Body-drain diode reverse recovery time
trr
400
ns
Body-drain diode reverse recovery charge
Qrr
1.5
C
IF = 5 A, VGS = 0
diF/dt = 100 A/
s
Note:
4. Pulse test
相关PDF资料
PDF描述
2SK3234-E 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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