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参数资料
| 型号： | 2SK3233-E |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 84K |
| 代理商： | 2SK3233-E |
2SK3233
Rev.2.00 Sep 07, 2005 page 4 of 6
5
1
2
3
4
–40
0
40
80
120
160
0
0.1 0.2
1
2
10 20
50
10
20
2
5
1
0.2
0.5
0.1
0.5
5
25°C
Tc = –25°C
75°C
VGS = 10 V
1 A
2 A
ID = 5 A
Drain Current
ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward
transfer
admittance
|yfs|
(S)
VDS = 10 V
Pulse Test
Case Temperature
Tc (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
0
50
100
150
200
250
2000
5000
1000
100
200
500
1000
800
600
400
200
0
20
10
20
30
40
50
0
4
8
16
12
1000
100
500
200
10
50
20
0.1
0.3
1
3
10
30
100
20
50
10
5
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 5 A
VDS
VGS
VDD = 400 V
250 V
100 V
di / dt = 100 A /
s
VGS = 0, Ta = 25°C
tr
td(on)
td(off)
tf
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
trr
(ns)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
Capacitance
C
(pF)
Drain to Source Voltage
VDS (V)
Switching
Time
t
(ns)
Drain Current
ID (A)
Switching Characteristics
Gate Charge
Qg (nC)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
VDD = 100 V
250 V
400 V
VGS = 10 V, VDD = 250 V
PW = 10
s, duty ≤ 1 %
Rg = 10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3234 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:2SK3234 |
| 2SK3234(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3235 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SK3235-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P Cut Tape |
| 2SK3236 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Drive Applications |
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