- 您现在的位置：买卖IC网 > PDF目录55798 > 2SK3236 35 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3236 |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 175K |
| 代理商： | 2SK3236 |
2SK3236
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3236
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
4-V gate drive
Low drain-source ON resistance: RDS (ON) = 13.5 m (typ.)
High forward transfer admittance: |Yfs| = 42 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
35
Drain current
Pulse
(Note 1)
IDP
105
A
Drain power dissipation (Tc
= 25°C)
PD
30
W
Single pulse avalanche energy
(Note 2)
EAS
68
mJ
Avalanche current
IAR
35
A
Repetitive avalanche energy (Note 3)
EAR
3.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
4.16
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C, L = 40 μH, RG = 25 Ω, IAR = 35 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3274L-E | 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3274STL-E | 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3294-ZJ | 20 A, 250 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3297 | 5 A, 600 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3312(2-10S1B) | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3236(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-220NIS |
| 2SK3236_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Drive Applications |
| 2SK3236_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator Applications, DC-DC Converter and |
| 2SK3239L-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK3239STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
发布紧急采购，3分钟左右您将得到回复。