参数资料
型号: 2SK3278TP
元件分类: 小信号晶体管
英文描述: 15000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件页数: 2/4页
文件大小: 30K
代理商: 2SK3278TP
2SK3278
No.6680-2/4
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Drain Current (DC)
ID
15
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
45
A
Allowable Power Dissipation
PD
1W
Tc=25
°C15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Rathings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.4
V
Forward Transfer Admittance
|yfs|
VDS=10V, ID=7A
7
10
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=7A, VGS=10V
27
36
m
RDS(on)2
ID=4A, VGS=4.5V
40
56
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
530
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
170
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
90
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
9
ns
Rise Time
tr
See specified Test Circuit
130
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
40
ns
Fall Time
tf
See specified Test Circuit
60
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=15A
10
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=15A
1.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=15A
1.0
nC
Diode Forward Voltage
VSD
IS=15A, VGS=0
1.0
1.2
V
Marking : K3278
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
10V
0V
VIN
P.G
50
G
S
2SK3278
ID=7A
RL=2.1
VDD=15V
VOUT
VIN
D
0
2.5
1.5
2.0
4.0
3.5
3.0
0.5
1.0
10
6
7
8
9
5
4
3
2
1
0
1.0
1.2
0.2
0.4
0.6
0.8
Tc=75
°C
--25
°C
VDS=10V
10
6
7
8
9
5
4
3
2
1
0
10.0V
3.5V
3.0V
4.5V
6.0V
VGS=2.5V
IT02555
IT02556
8.0V
25
°C
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Gate-to-Source Voltage, VGS -- V
Drain
Current,
I
D
-
A
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