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参数资料
| 型号： | 2SK3299-ZJ |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | MP-25ZJ, TO-263, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 206K |
| 代理商： | 2SK3299-ZJ |
1999,2000
MOS FIELD EFFECT TRANSISTOR
2SK3299
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D14060EJ1V0DS00 (1st edition)
Date Published
April 2000 NS CP(K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
shows major revised points.
DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features
a low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 0.75
MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±10
A
Drain Current (Pulse)
Note1
ID(pulse)
±40
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
75
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
10
A
Single Avalanche Energy
Note2
EAS
66.7
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25
, VGS = 20 V → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3299
TO-220AB
2SK3299-S
TO-262
2SK3299-ZJ
TO-263
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3299-AZ | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3301(2-7J1B) | 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3301 | 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3304 | 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3305-ZJ | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK33 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK330 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
| 2SK330_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
| 2SK3301 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulatorand DC-DC Converter Applications |
| 2SK3301(Q) | 功能描述:MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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