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参数资料
| 型号： | 2SK3299-ZJ |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | MP-25ZJ, TO-263, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 206K |
| 代理商： | 2SK3299-ZJ |
Data Sheet D14060EJ1V0DS00
2
2SK3299
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
IDSS
VDS = 600 V, VGS = 0 V
100
A
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 5.0 A
3.2
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 5.0 A
0.68
0.75
Input Capacitance
Ciss
VDS = 10 V
1580
pF
Output Capacitance
Coss
VGS = 0 V
280
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
25
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 5.0 A
27
ns
Rise Time
tr
VGS(on) = 10 V
17
ns
Turn-off Delay Time
td(off)
RG = 10
66
ns
Fall Time
tf
24
ns
Total Gate Charge
QG
VDD = 450 V
34
nC
Gate to Source Charge
QGS
VGS = 10 V
8.2
nC
Gate to Drain Charge
QGD
ID = 10 A
12.3
nC
Diode Forward Voltage
VF(S-D)
IF = 10 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 10 A, VGS = 0 V
1.9
s
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
12
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr td(off)
tf
10 %
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| 2SK3301(Q) | 功能描述:MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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